Electrical properties of CuInSe2 crystals obtained by gas transport method

GASHIN, P.; KETRUSH, P.; NIKORICH, V.; SUMAN, V.; TAZLAVAN, V.

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dc.contributor.author	GASHIN, P.
dc.contributor.author	KETRUSH, P.
dc.contributor.author	NIKORICH, V.
dc.contributor.author	SUMAN, V.
dc.contributor.author	TAZLAVAN, V.
dc.date.accessioned	2019-10-18T12:07:15Z
dc.date.available	2019-10-18T12:07:15Z
dc.date.issued	2005
dc.identifier.citation	GASHIN, P., KETRUSH, P., NIKORICH, V. et al. Electrical properties of CuInSe2 crystals obtained by gas transport method. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 101-104. ISBN 9975-66-038-X.	en_US
dc.identifier.isbn	9975-66-038-X
dc.identifier.uri	http://repository.utm.md/handle/5014/4851
dc.description.abstract	The ternary compounds of I-III-VI2 group and their solid solutions recently became one of the most promising materials for the fabrication of high efficiency solar cells. The unique physical properties and relatively low cost of the material allow to use CuIn(Ga)Se2 thin films in the low cost large area photo-converters with the efficiency reaching 17%. The further increase of the photo-converters efficiency is stipulated by the fabrication of the epitaxial CuIn(Ga)Se2 layers with the minimum concentration of the native lattice defects.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	crystals	en_US
dc.subject	gas transport	en_US
dc.title	Electrical properties of CuInSe2 crystals obtained by gas transport method	en_US
dc.type	Article	en_US