Proprietăţile electrice ale celulei fotovoltaice cu joncţiune reliefată fabricată prin HVPE

BARANOV, Simion; GORCEAC, Leonid; CINIC, Boris

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dc.contributor.author	BARANOV, Simion
dc.contributor.author	GORCEAC, Leonid
dc.contributor.author	CINIC, Boris
dc.date.accessioned	2019-10-18T10:51:33Z
dc.date.available	2019-10-18T10:51:33Z
dc.date.issued	2014
dc.identifier.citation	BARANOV, Simion, GORCEAC, Leonid, CINIC, Boris. Proprietăţile electrice ale celulei fotovoltaice cu joncţiune reliefată fabricată prin HVPE. In: Microelectronics and Computer Science: proc. of the 8th intern. conf., October 22-25, 2014. Chişinău, 2014, pp. 24-27. ISBN 978-9975-45-329-5.	en_US
dc.identifier.isbn	978-9975-45-329-5
dc.identifier.uri	http://repository.utm.md/handle/5014/4839
dc.description.abstract	In this report we are represented the electro-physical properties of the photovoltaic cell with single relief junction fabricated on gallium arsenide substrate by HVPE method. This cell have the shunt resistance of 3.8 time bigger then the plane one, that it demonstrates the decrease of energy losses on the cell surface. It increases the efficiency of charges gathering (78 % of the full coefficient). It was used the AFM and RAMAN methods of investigation.	en_US
dc.language.iso	ro	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	gallium arsenide	en_US
dc.subject	hydride vapor phase epitaxy	en_US
dc.subject	single relief p-n junction	en_US
dc.title	Proprietăţile electrice ale celulei fotovoltaice cu joncţiune reliefată fabricată prin HVPE	en_US
dc.type	Article	en_US