Spin-splitted states and spin hall effect induced by polarization in semiconductors structures

Abstract

A new terms of SOI induced by interband interaction through the electrical polarization or atomic displacement like optical phonons are proposed and analyzed. These SOI mechanisms have the physical nature in the relativistic quantum mechanics with Lorentz boosts. Some particularities of the electronic states of semiconductor quantum wells (QW) and tunneling characteristics of single barrier heterostrucrure related to new SOI terms are studied. Size quantization states of QW are shown to transform into interface ones under SOI effect. Tunneling characteristics of single barrier heterostrucrure are established to be spin-dependent under SOI induced by the EP. The spin Hall effect (SHE) is analyzed in a two dimensional electron system with the SOI of both intrinsic and EP induced types. New peculiarities of SHE, induced by interband interaction of heavy and light holes through optical like displacements, are studied in p-doped semiconductors in the framework of generalized Luttinger Hamiltonian.