Peculairities of impurity influience in weakly degenerated systems

dc.contributor.author	BODIUL, Pavel
dc.contributor.author	PEEV, Leonid
dc.date.accessioned	2019-10-17T07:52:08Z
dc.date.available	2019-10-17T07:52:08Z
dc.date.issued	2005
dc.identifier.citation	BODIUL, Pavel, PEEV, Leonid. Peculairities of impurity influience in weakly degenerated systems. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 189-191. ISBN 9975-66-038-X.	en_US
dc.identifier.issn	9975-66-038-X
dc.identifier.uri	http://repository.utm.md/handle/5014/4762
dc.description.abstract	It is experimentally found that small additions to bismuth of elements of the IV and VI groups lead to such change in concentration of free charge carriers that it is less than one electron per atom and considerably depends on nature of the latter. Composition of ternary alloys of bismuth with elements of the IV and VI groups with the electric properties close to those of pure bismuth was successful at the liquid nitrogen temperature.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	bismuth	en_US
dc.subject	weakly degenerated systems	en_US
dc.title	Peculairities of impurity influience in weakly degenerated systems	en_US
dc.type	Article	en_US