Thermower in weacly degenerated systems

Abstract

Doping of semimetals with impurities of the IV and VI groups considerably influences kinetic properties of these systems and it is one of the methods for investigation of peculiarities of the free carrier band spectrum. Bismuth doping with selenium and tellurium leads to an increase of concentration of free electrons, and accordingly to the Fermi level increase. Smooth shift of the Fermi level gives a possibility to study the band structure, in the given case the conduction band of bismuth. However, small concentration region of solubility of selenium impurities in bismuth did not give a possibility using the traditional method of zone recrystallization to obtain strongly doped alloys of high quality, and thus to investigate a wide energy interval of the conduction band. We have used a new method to obtain strongly doped qualitative single crystals of bismuth, it allows smooth shifting of the Fermi level deep into the conduction band.