Effect of rapid photothermal processing on the C-V characteristics of anodic SiO2 films

ŞIŞIANU, Teodor; SONTEA, Victor; ŞIŞIANU, Sergiu; LUPAN, Oleg; POCAZNOI, Ion; RAILEAN, Serghei

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dc.contributor.author	ŞIŞIANU, Teodor
dc.contributor.author	SONTEA, Victor
dc.contributor.author	ŞIŞIANU, Sergiu
dc.contributor.author	LUPAN, Oleg
dc.contributor.author	POCAZNOI, Ion
dc.contributor.author	RAILEAN, Serghei
dc.date.accessioned	2019-10-16T09:10:40Z
dc.date.available	2019-10-16T09:10:40Z
dc.date.issued	2005
dc.identifier.citation	ŞIŞIANU, Teodor, ŞONTEA, Victor, ŞIŞIANU, Sergiu et al. Effect of rapid photothermal processing on the C-V characteristics of anodic SiO2 films. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 32-35. ISBN 9975-66-038-X.	en_US
dc.identifier.isbn	9975-66-038-X
dc.identifier.uri	http://repository.utm.md/handle/5014/4712
dc.description.abstract	The effect of rapid photothermal processing (RPP) in nitrogen on anodic SiO2 for high quality oxide preparation in terms of gate dielectrics in thin film transistors is reported. Samples prepared by anodic oxidation of silicon in different pre-oxidation and oxidation conditions, and RPP have been used for characterization of SiO2 thin film devices.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	anodic oxidation	en_US
dc.subject	films	en_US
dc.subject	rapid photothermal processing	en_US
dc.subject	interface traps	en_US
dc.title	Effect of rapid photothermal processing on the C-V characteristics of anodic SiO2 films	en_US
dc.type	Article	en_US