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Browsing Facultatea Electronică şi Telecomunicaţii by Author "URSAKI, V. V."

Browsing Facultatea Electronică şi Telecomunicaţii by Author "URSAKI, V. V."

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  • Exciton spectra and energy band structure of CuAlSe2 crystals 
    SYRBU, N. N.; URSAKI, V. V.; DOROGAN, A. V.; MASNIK, A. (Tehnica UTM, 2011)
    The main exciton parameters and the refined values of the energy intervals V1 (Г7) - C1( Г6), V2 (Г6) - C1( Г6) and V3 (Г7) - C1( Г6) in CuAlSe2 crystals are discussed. The effective masses of electrons (m*с1), and holes ...
  • Exitonul lui Frenkel în cristale PbGa2S4 
    PARVAN, V. I.; SYRBU, N. N.; URSAKI, V. V.; ZALAMAI, V.; BEJAN, N. (Technical University of Moldova, 2012)
    Pentru cristale PbGa2S4 este calculat conturul spectrelor de reflecţie a excitonii lui Frenkel. Sint identificaţi parametrii excitonului si benzele. Sint calculate valorile despicării cauzate de cimpul cristalin (Δcris) ...
  • Porosification of narrow and wide band gap semiconductor compounds: comparative study of InAs, InP and ZnSe 
    MONAICO, Eduard; TIGINYANU, I. M.; URSAKI, V. V.; COLIBABA, G.; NEDEOGLO, D. D.; COJOCARU, A.; FÖLL, H. (Technical University of Moldova, 2012)
    A comparative study of the pore growth during anodization of a narrow-bandgap III-V compound (InAs), a medium-bandgap III-V compound (InP) and a wide-bandgap II-VI semiconductor (ZnSe) is performed. It was found that the ...

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