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Browsing Facultatea Electronică şi Telecomunicaţii by Author "TIGINYANU, I. M."

Browsing Facultatea Electronică şi Telecomunicaţii by Author "TIGINYANU, I. M."

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  • Modificări fotoinduse în stările de suprafaţă în structurile poroase de InP 
    ENACHI, M.; LLOYD-HUGHES, J.; MÜLLER, S.; SCALARI, G.; BISHOP, H.; CROSSLEY, A.; SIRBU, L.; TIGINYANU, I. M. (Technical University of Moldova, 2012)
    In this paper we present the results of the exploration of n-InP membranes with honeycomb porous structure. The samples were obtained via electrochemical anodization of n-InP:S substrates in solution of HCl in water. ...
  • Non-lithographic nanotechnologies for 2D and 3D nanofabrication 
    TIGINYANU, I. M. (Technical University of Moldova, 2012)
    In this paper we present a review of technological approaches for 2D and 3D nanofabrication of semiconductor compounds by using radiation treatment and electrochemistry. Novel spatial nanoarchitectures based on III-V and ...
  • Porosification of narrow and wide band gap semiconductor compounds: comparative study of InAs, InP and ZnSe 
    MONAICO, Eduard; TIGINYANU, I. M.; URSAKI, V. V.; COLIBABA, G.; NEDEOGLO, D. D.; COJOCARU, A.; FÖLL, H. (Technical University of Moldova, 2012)
    A comparative study of the pore growth during anodization of a narrow-bandgap III-V compound (InAs), a medium-bandgap III-V compound (InP) and a wide-bandgap II-VI semiconductor (ZnSe) is performed. It was found that the ...

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