Photoluminescence properties of eu doped ZnO films under thermal treatment

Abstract

ZnO is a well-established semiconductor, widely used for applications such as biomedical applications due to its wide bandgap and high excitation binding energy. However, challenges such as high operating temperatures and poor selectivity limit its potential. In order to optimize optical properties of this material researchers often explore a dual modification strategy: doping with europium (Eu). In this paper we present preliminary results on ZnO:Eu3+ emission spectra related to their technological treatment. Experimental methods: The films were synthesized via a chemical solution approach, followed by thermal annealing. Photoluminescence spectra were recorded at room temperature using as an excitation source a laser diode at 375 nm (Thorlabs, USA). The measurement setup was described elsewhere