Electrical behavior of the CdTe heterojunction cells fabricated on polyimide substrates

POTLOG, Tamara; SPALATU, Nicolaie

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dc.contributor.author	POTLOG, Tamara
dc.contributor.author	SPALATU, Nicolaie
dc.date.accessioned	2024-01-05T07:33:44Z
dc.date.available	2024-01-05T07:33:44Z
dc.date.issued	2009
dc.identifier.citation	POTLOG, Tamara, SPALATU, Nicolaie. Electrical behavior of the CdTe heterojunction cells fabricated on polyimide substrates. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 47-50. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1).	en_US
dc.identifier.isbn	978-9975-45-045-4
dc.identifier.isbn	978-9975-45-122-2
dc.identifier.uri	http://repository.utm.md/handle/5014/25716
dc.description.abstract	Hot-wall technique has been used for preparation of CdTe heterojunction cells on the polyimide substrates covered with ITO layer. Carrier transport mechanisms of the heterojunction cells are briefly discussed. It has been established that tuneling recombination current flows through states near or at the interface with a thermal activation energy 0,34 eV; 0,33 eV; 0, 34 eV; for applied bias voltages 0,1V; 0,2 V and 0,3 V; respectively. The reverse current is limited by the carrier generation process.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.relation.ispartof	Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	polyimide substrates	en_US
dc.subject	heterojunction cells	en_US
dc.title	Electrical behavior of the CdTe heterojunction cells fabricated on polyimide substrates	en_US
dc.type	Article	en_US