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Browsing Conferinţa Internaţională "Telecomunicaţii, Electronică şi Informatică" - ICTEI by Subject "lasers"

Browsing Conferinţa Internaţională "Telecomunicaţii, Electronică şi Informatică" - ICTEI by Subject "lasers"

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  • Anticipated synchronization of DFB laser with passive dispersive reflector 
    TRONCIU, V. Z.; ROTARU, A. H.; RUSU, S.; RUSU, A. (Technical University of Moldova, 2012)
    We discuss the phenomena of anticipated synchronization in a DFB lasers with passive dispersive reflector. A rate equation model is proposed. It is shown that the system of two lasers coupled in unidirectional configuration ...
  • Long wavelength VCSEL potential for processing of analog microwave signals 
    IAKOVLEV, V.; BELKIN, M.; BELKIN, L.; SURUCEANU, G.; MEREUTA, A.; CALIMAN, A.; SIRBU, A.; KAPON, E. (Technical University of Moldova, 2012)
    A VCSEL-based optoelectronic frequency conversion process is investigated in details by simulation in modern OE-CAD tools and experimentally. A novel version of a VCSEL based microwave frequency converter is proposed. An ...
  • Numerical and experimental studies of a distributed Bragg reflector laser 
    TRONCIU, V. Z.; RADZIUNAS, M.; WENZEL, H.; KNIGGE, A.; REGGENTIN, M.; WIEDMANN, J. (Tehnica UTM, 2018)
    We report in this paper theoretical and experimental results on the dynamical properties of a distributed Bragg reflector (DBR) semiconductor lasers. Using the traveling wave equation model, we show that a proper choice ...
  • Optical spectra in the region of excitonic resonances in quantum wells and quantum dots of In0.3Ga0.7As/GaAs heterostructures 
    DOROGAN, A.; DOROGAN, V.; MEREUTA, A.; SYRBU, A.; SYRBU, N.; VIERU, T.; URSAKI, V.; ZALAMAI, V.; IACOVLEV, V. (Technical University of Moldova, 2012)
    Lines conditioned by the transitions hh,lh1-e1(1s,2s,3s), hh2,lh2-e2(1s,2s,3s), hh1,lh1-e2(1s) and hh3,lh3-e3(1s) had been revealed in reflection spectra of In0.3 Ga0.7As / GaAs nanostructures. The shapes of the reflection ...
  • Temperature influence on In0,3Ga0,7As / GaAs nanostructures of VCSEL lasers with quantum wells 
    DOROGAN, A.; DOROGAN, V.; MEREUTA, A.; SYRBU, A.; SYRBU, N.; VIERU, T.; URSAKI, V.; ZALAMAI, V. (Technical University of Moldova, 2012)
    Transitions hh,lh1-e1(1s), hh1,lh1-e2(1s), hh2,lh2 -e2(1s), hh3,lh3,-e3(1s) and the particularities conditioned by quantum dots (QD) produced on the boundaries of nanolayers and buffer layer had been revealed in reflection ...
  • Theoretical Study of External Cavity Diode Laser Using Simulation of Modes 
    DUMANOV, E. V.; TRONCIU, V. Z.; DUMANOV, E. V.; WENZEL, H. (Technical University of Moldova, 2015)
    This paper reports the results of numerical investigations of the modal behavior of a laser with an external feedback. The numerical calculations are based on the solution of the homogeneous coupled-wave equations using a ...
  • VCSEL measurements and characterization for gas sensing 
    VIERU, T.; DOROGAN, A.; VIERU, S.; DOROGAN, V. (Technical University of Moldova, 2012)
    The paper presents the results of measurements and analysis of parameters and characteristics of Vertical Cavity Surface Emitting Laser (VCSEL) Diode to use in gas detectors on the basis of the tunable diode laser spectroscopy ...

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