Process for obtaining of semiconductor nanowires in one step via anodization

MONAICO, Elena; MONAICO, Eduard; URSAKI, Veaceslav; TIGINYANU, Ion

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dc.contributor.author	MONAICO, Elena
dc.contributor.author	MONAICO, Eduard
dc.contributor.author	URSAKI, Veaceslav
dc.contributor.author	TIGINYANU, Ion
dc.date.accessioned	2022-05-24T06:55:47Z
dc.date.available	2022-05-24T06:55:47Z
dc.date.issued	2021
dc.identifier.citation	MONAICO, Elena, MONAICO, Eduard, URSAKI, Veaceslav et al. Process for obtaining of semiconductor nanowires in one step via anodization. In: European Exhibition of Creativity and Innovation: proc. of the 13th ed. EUROINVENT, Iasi, Romania, 2021, pp. 181-182. ISSN 2601-4564. e-ISSN 2601-4572.	en_US
dc.identifier.issn	2601-4564
dc.identifier.issn	2601-4572
dc.identifier.uri	http://repository.utm.md/handle/5014/20373
dc.description	Patent application No. 6673/2020.	en_US
dc.description.abstract	Herein, we propose the technological route via electrochemical etching of bulk GaAs, GaP, and InP substrates for obtaining of a network of semiconductor nanowires with a diameter in the range of 50 - 500 nm, the nanowires being oriented perpendicular to the surface of the substrate and with a homogeneous distribution on the surface of the semiconductor wafer.	en_US
dc.language	en
dc.publisher	Romanian Inventors Forum	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	invenţii	en_US
dc.subject	inventions	en_US
dc.subject	gallium arsenide substrates	en_US
dc.subject	gallium phosphide substrates	en_US
dc.subject	indium phosphide substrates	en_US
dc.subject	semiconductor nanowires	en_US
dc.subject	electrochemical etching	en_US
dc.subject	semiconductor wafers	en_US
dc.title	Process for obtaining of semiconductor nanowires in one step via anodization	en_US
dc.type	Article	en_US