IR photodetector based on the GaAs nanowire

dc.contributor.author	MONAICO, Eduard
dc.contributor.author	URSAKI, Veaceslav
dc.contributor.author	MONAICO, Elena
dc.contributor.author	TIGINYANU, Ion
dc.date.accessioned	2022-05-24T06:45:55Z
dc.date.available	2022-05-24T06:45:55Z
dc.date.issued	2021
dc.identifier.citation	MONAICO, Eduard, URSAKI, Veaceslav, MONAICO, Elena et al. IR photodetector based on the GaAs nanowire. In: European Exhibition of Creativity and Innovation: proc. of the 13th ed. EUROINVENT, Iasi, Romania, 2021, pp. 180-181. ISSN 2601-4564. e-ISSN 2601-4572.	en_US
dc.identifier.issn	2601-4564
dc.identifier.issn	2601-4572
dc.identifier.uri	http://repository.utm.md/handle/5014/20372
dc.description	Patent application No. 6674/2020	en_US
dc.description.abstract	Herein, we propose the manufacture of IR photodetector based on GaAs nanowire with good sensitivity and dynamic characteristics prepared by a cost-effective electrochemical etching of GaAs wafer, which does not require sophisticated and expensive equipment.	en_US
dc.language	en
dc.publisher	Romanian Inventors Forum	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	invenţii	en_US
dc.subject	inventions	en_US
dc.subject	infrared photodetectors	en_US
dc.subject	nanowires	en_US
dc.subject	electrochemical etching	en_US
dc.subject	gallium arsenide wafers	en_US
dc.title	IR photodetector based on the GaAs nanowire	en_US
dc.type	Article	en_US