Process for wide bandgap semiconductor nanowires obtaining on narrow bandgap semiconductor substrate

MONAICO, Elena; MONAICO, Eduard; URSAKI, Veaceslav; TIGINYANU, Ion

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dc.contributor.author	MONAICO, Elena
dc.contributor.author	MONAICO, Eduard
dc.contributor.author	URSAKI, Veaceslav
dc.contributor.author	TIGINYANU, Ion
dc.date.accessioned	2022-05-20T10:30:52Z
dc.date.available	2022-05-20T10:30:52Z
dc.date.issued	2022
dc.identifier.citation	MONAICO, Elena, MONAICO, Eduard, URSAKI, Veaceslav et al. Process for wide bandgap semiconductor nanowires obtaining on narrow bandgap semiconductor substrate. In: European Exhibition of Creativity and Innovation: proc. of the 14th ed. EUROINVENT, Iasi, Romania: hybrid ed., 2022, pp. 149-150. ISSN 2601-4564. e-ISSN 2601-4572.	en_US
dc.identifier.issn	2601-4564
dc.identifier.issn	2601-4572
dc.identifier.uri	http://repository.utm.md/handle/5014/20334
dc.description	Istitution: Technical University of Moldova. Patent application No. a 2021 0054 from 06.08.2021. Exibits Clasification: Class no. 14. - Other.	en_US
dc.description.abstract	Herein, we propose the manufacture of wide bandgap (Eg) semiconductor nanowires on narrow bandgap semiconductor support with good thermal conductivity, and the diameter of the nanowires varies in the range from 50 nm to 500 nm.	en_US
dc.language	en
dc.publisher	Romanian Inventors Forum	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	invenţii	en_US
dc.subject	inventions	en_US
dc.subject	semiconductor nanowires	en_US
dc.subject	semiconductor supports	en_US
dc.subject	semiconductor nanowire networks	en_US
dc.title	Process for wide bandgap semiconductor nanowires obtaining on narrow bandgap semiconductor substrate	en_US
dc.type	Article	en_US