Enhanced efficiency of p-GaN/n-ZnO light-emitting diodes by using NiO and ZnSe interlayers

SIRKELI, V. P.; YILMAZOGLU, O.; KÜPPERS, F.; HARTNAGEL, H. L.

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dc.contributor.author	SIRKELI, V. P.
dc.contributor.author	YILMAZOGLU, O.
dc.contributor.author	KÜPPERS, F.
dc.contributor.author	HARTNAGEL, H. L.
dc.date.accessioned	2022-05-16T10:00:44Z
dc.date.available	2022-05-16T10:00:44Z
dc.date.issued	2015
dc.identifier.citation	SIRKELI, V. P., YILMAZOGLU, O., KÜPPERS, F. et al. Enhanced efficiency of p-GaN/n-ZnO light-emitting diodes by using NiO and ZnSe interlayers. In: Science and Society- the Use of Light: Workshop în cadrul conf. ICNBME - International Conference on Nanotechnologies and Biomedical Engineering, 24-25 Sept, 2015, Chişinău, Republic of Moldova: Abstracts, 2015, p. 37.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/20301
dc.description	Only Abstract	en_US
dc.description.abstract	We report the results from numerical simulations of p-GaN/n-ZnO light-emitting diodes (LEDs) with different architectures. p-GaN/n-ZnO, p-GaN/p-NiO/n-ZnO, and p-GaN/p-NiO/n-ZnSe/n-ZnO LED structures have been examinated using one-dimensional (1D) Schrödinger-Poisson solver simulator.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	light-emitting diodes	en_US
dc.subject	electroluminescence devices	en_US
dc.subject	gallium nitride	en_US
dc.subject	zinc oxide	en_US
dc.subject	nickel oxide	en_US
dc.subject	zinc selenide	en_US
dc.subject	LED devices	en_US
dc.title	Enhanced efficiency of p-GaN/n-ZnO light-emitting diodes by using NiO and ZnSe interlayers	en_US
dc.type	Article	en_US