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Characteristics of Surface-Barrier Structures on Zinc Diarsenide with Hole Conductivity

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dc.contributor.author STAMOV, I.G.
dc.contributor.author TKACHENKO, D.V.
dc.contributor.author STREL’CHUK, YU.
dc.date.accessioned 2021-11-12T09:32:08Z
dc.date.available 2021-11-12T09:32:08Z
dc.date.issued 2021
dc.identifier.citation STAMOV, I.G., TKACHENKO, D.V., STREL’CHUK, YU. Characteristics of Surface-Barrier Structures on Zinc Diarsenide with Hole Conductivity. In: ICNMBE-2021: the 5th International Conference on Nanotechnologies and Biomedical Engineering, November 3-5, 2021: Program and abstract book. Chişinău, 2021, p. 67. ISBN 978-9975-72-592-7. en_US
dc.identifier.isbn 978-9975-72-592-7
dc.identifier.uri http://repository.utm.md/handle/5014/17991
dc.description Only Abstract en_US
dc.description.abstract The surface-barrier photosensitive structures based on zinc diarsenide crystals with metals have been produced. The electrical and photovoltaic properties of these structures were investigated. The photocurrent spectra and electrical characteristics are determined by the parameters of the semiconductor and the physicochemical properties of the contacting metals. en_US
dc.language.iso en en_US
dc.publisher Universitatea Tehnică a Moldovei en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject surface-barrier structures on Zinc en_US
dc.subject zinc diarsenide crystals en_US
dc.subject semiconductor en_US
dc.title Characteristics of Surface-Barrier Structures on Zinc Diarsenide with Hole Conductivity en_US
dc.type Article en_US


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