Browsing Conferinţe by Subject "gallium nitride"

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  • Aero-Materials Based on Wide-Band-Gap Semiconductor Compounds for Multifunctional Applications: A Review 
    TIGINYANU, Ion; BRANISTE, Tudor (Springer Nature Switzerland, 2023)
    The aim of this paper is to review the research efforts undertaken last years to develop novel hybrid three-dimensional micro-nano-architectures based on wide-band-gap binary compounds for multifunctional applications. ...
  • Effect of p-NiO interlayer on efficiency of p-GaN/n-ZnO LED devices 
    SIRKELI, Vadim P.; YILMAZOGLU, Oktay; KÜPPERS, Franko; HARTNAGEL, L. (Tehnica UTM, 2014)
    We report on numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes with p-NiO interlayer, and on LED design optimization which includes bandgap engineering, thickness and doping of constituent layers. ...
  • Enhanced efficiency of p-GaN/n-ZnO light-emitting diodes by using NiO and ZnSe interlayers 
    SIRKELI, V. P.; YILMAZOGLU, O.; KÜPPERS, F.; HARTNAGEL, H. L. (Technical University of Moldova, 2015)
    We report the results from numerical simulations of p-GaN/n-ZnO light-emitting diodes (LEDs) with different architectures. p-GaN/n-ZnO, p-GaN/p-NiO/n-ZnO, and p-GaN/p-NiO/n-ZnSe/n-ZnO LED structures have been examinated ...
  • The Influence of Semiconductor Nanoparticles upon the Activity of Mesenchymal Stem Cells 
    BRANISTE, T.; COBZAC, V.; ABABII, P.; PLESCO, I.; RAEVSCHI, S.; DIDENCU, A.; MANIUC, M.; NACU, V.; ABABII, I.; TIGINYANU, I. (Tehnica UTM, 2019)
    In this paper, we report on the viability and proliferation of mesenchymal stem cells after exposure to different types of semiconductor nanoparticles.
  • Nanodimensional AlN layers grown on silicon in the system H2-HCl-Al-NH3 
    RAEVSCHI, Simion; BOTNARIUC, Vasile; GORCEAC, Leonid; TIRON, Stefan; KOMPAN, Mihail; ZHILYAEV, Yurii (Tehnica UTM, 2013)
    There were obtained nanodimensional AlN layers on Si by HVPE (Hydride Vapor Phase Epitaxy) method. SEM (Scanning Electron Microscopy) images of AlN layers, and cross-sections of AlN/Si structures are shown. The structure ...
  • New Areas of Research and Applications for GaN 
    TIGINYANU, Ion (Tehnica UTM, 2019)
    Gallium nitride, a wide-bandgap semiconductor compound (Eg = 3.4 eV at 300 K), has in the last two decades registered a fascinating increase in the crystalline quality of epitaxial layers determining its leading role in ...
  • New take-off of Gallium Nitride 
    TIGINYANU, Ion (Technical University of Moldova, 2015)
    Gallium Nitride (GaN) is a wide-band-gap semiconductor compound (Eg = 3.4 eV at 300 K) which over the last decades played a major role in the development of modern solid-state lighting industry. An intensive investigation ...
  • Zinc Oxide and Gallium Nitride Nanoparticles Application in Biomedicine: A Review 
    COJOCARI, Ștefan; IGNATOV, O.; JIAN, M.; COBZAC, V.; BRANIȘTE, T.; MONAICO, E. V.; TARAN, A.; NACU, V. (Springer, Cham, 2022)
    Currently available data have a major impact on widening the applications area of zinc oxide (ZnO) and gallium nitride (GaN) nanoparticles (NPs). Being a new medical domain, nanomedicine shows a spectacular growth of ...

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