Browsing Conferinţe by Author "RAEVSCHI, S."

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  • POTLOG, T.; LUNGU, I.; RAEVSCHI, S.; BOTNARIUC, V.; ROBU, S.; WORASAWAT, S.; MIMURA, H. (Tehnica UTM, 2019)
    Al-doped ZnO thin films have been prepared by spray pyrolysis, which facilitates the incorporation of a higher percentage of dopant atoms. The vacuum thermally annealed at 420 °C temperature thin films have been characterized ...
  • BANU, S.; BOTNARIUC, V.; GORCEAC, L.; COVAL, A.; CINIC, B.; CHETRUŞ, P.; RAEVSCHI, S. (Tehnica UTM, 2013)
    The objective of this paper is establishing of the optimum conditions for CdS layers deposition by pulverization method on glass substrates coated with a previously deposited tampon SnO2 layer, studies of their electrical ...
  • ALDRIGO, M.; DRAGOMAN, M.; BRANISTE, T.; IORDANESCU, S.; RAEVSCHI, S.; SHREE, S.; ADELUNG, R.; TIGINYANU, I. (Tehnica UTM, 2019)
    In this paper, we present the electromagnetic interference shielding properties of an ultra-porous and ultra-light GaN-based nanomaterial, which we will refer to with aeroGaN. The importance of the so-called X-band (8.2-12.4 ...
  • RAEVSCHI, S.; GORCEAC, L.; BOTNARIUC, V.; BRANISTE, T. (Tehnica UTM, 2019)
    GaN layers on Silicon with ZnO intermediate layer were synthesized by using the HVPE (Hydride Vapor Phase Epitaxy) method. ZnO layers were deposited from solutions of zinc compounds in ethanol or water in two steps. At the ...
  • BRANISTE, T.; TIGINYANU, I.; HORVATH, T.; RAEVSCHI, S.; GRIDENCO, O.; CEBOTARI, S.; HILFIKER, A. (Technical University of Moldova, 2016)
    We found that ECs attract free NPs and, depending on the NP concentration, the cellular activity is slowed down resulting in lower cellular mobility. Nevertheless, cellular proliferation does not seem to be affected as ...
  • BRANISTE, T.; COBZAC, V.; ABABII, P.; PLESCO, I.; RAEVSCHI, S.; DIDENCU, A.; MANIUC, M.; NACU, V.; ABABII, I.; TIGINYANU, I. (Tehnica UTM, 2019)
    In this paper, we report on the viability and proliferation of mesenchymal stem cells after exposure to different types of semiconductor nanoparticles.
  • RAEVSCHI, S.; SPALATU, N.; GORCEAC, L.; BOTNARIUC, V. (Technical University of Moldova, 2017)
    Lucrarea este consacrată dezvoltării tehnologiei de obținere a straturilor epitaxiale de nitrură de galiu pe siliciu prin metoda HVPE (Hydride Vapor Phase Epitaxy). Sintetizarea GaN nemijlocit pe siliciu este complicat de ...
  • RAEVSCHI, S.; BOTNARIUC, V.; GORCEAC, L.; POTLOG, T.; DOBROMIR, M.; LUCA, D. (Tehnica UTM, 2015)
    Thin layers of GaN, and AlGaN were synthesized on Silicon substrates by chemical transport reactions method in the system (H2-NH3-HCl-Al-Ga).The composition of surface layers was studied by X-ray Photoelectron Spectroscopy ...
  • POTLOG, T.; BOTNARIUC, V.; RAEVSCHI, S.; DOBROMIR, M.; LUCA, D. (Tehnica UTM, 2015)
    Cd2SnO4 thin films with a 1:1 and 1:3 Sn/Cd weight ratio at different substrate temperatures were fabricated by spray pyrolysis. The structural and surface composition of these films by X-ray diffraction (XRD) and X-ray ...
  • BOTNARIUC, V.; GORCEAC, L.; COVAL, A.; CINIC, B.; GAUGAS, P.; CHETRUS, P.; LUNGU, I.; RAEVSCHI, S. (Tehnica UTM, 2019)
    The ZnO thin layers were grown on glass, InP and pInP-nCdS substrates from zinc acetate dissolved in water-acetic acid-methanol solution having a molarity of 0.2 M by using the spray method in the argon flow in the temperature ...

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