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Detection in the contacts at low temperatures: influence of the free electrons concentration on the detecting parameters

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dc.contributor.author KERNER, Ia. I.
dc.date.accessioned 2020-12-09T11:41:03Z
dc.date.available 2020-12-09T11:41:03Z
dc.date.issued 2017
dc.identifier.citation KERNER, Ia. I. Detection in the contacts at low temperatures: influence of the free electrons concentration on the detecting parameters. In: Microelectronics and Computer Science: proc. of the 9th intern. conf., October 19-21, 2017. Chişinău, 2017, p. 517. ISBN 978-9975-4264-8-0. en_US
dc.identifier.isbn 978-9975-4264-8-0
dc.identifier.uri http://repository.utm.md/handle/5014/12025
dc.description.abstract The diode detectors (DD) play an important role in radio technique and electronics. The use of high frequencies (above 1 GHz) stimulated the careful study of diodes with Schottky barrier. These diodes use the quick-acting metal-semiconductor contacts. The further improvement of their parameters was achieved due to fall of the working temperature (T). This direction was named cryoelectronics, it allows to raise the nonlinearity of the current-voltage dependences and current responsivity. The thermal noise power decreases too. For example there were elaborated DD based on the contacts Pb-pGaAs . At the signal frequency f = 9 GHz and T= 4.2 K these diodes had current responsivity (CR) 500 A/W and noise equivalent power (NEP) 510-15 W/ Hz . At the same frequency and T= 1 K there parameters were: CR ≈ 2500 A/W and NEP ≈ 410-16 W/ Hz . Also the deep cooling allows using the materials with little energy gap width but high mobility of electrons, such as solid solutions Bi-Sb. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject diode detectors (DD) en_US
dc.subject high frequencies en_US
dc.subject temperature en_US
dc.subject free electrons concentration en_US
dc.title Detection in the contacts at low temperatures: influence of the free electrons concentration on the detecting parameters en_US
dc.type Article en_US


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