Critical current of MgB2 microbriges

SURDU, A.; SOKROVISCIUC, A.; ANTROPOV, E.; MIKHAILOV, M.; SIVAKOV, A.; POKHILA, A.; SIDORENKO, A.

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dc.contributor.author	SURDU, A.
dc.contributor.author	SOKROVISCIUC, A.
dc.contributor.author	ANTROPOV, E.
dc.contributor.author	MIKHAILOV, M.
dc.contributor.author	SIVAKOV, A.
dc.contributor.author	POKHILA, A.
dc.contributor.author	SIDORENKO, A.
dc.date.accessioned	2020-11-30T12:33:33Z
dc.date.available	2020-11-30T12:33:33Z
dc.date.issued	2012
dc.identifier.citation	SURDU, A., SOKROVISCIUC, A., ANTROPOV, E. et al. Critical current of MgB2 microbriges. In: Microelectronics and Computer Science: proc. of the 9th intern. conf., October 19-21, 2017. Chişinău, 2017, pp. 429. ISBN 978-9975-4264-8-0.	en_US
dc.identifier.isbn	978-9975-4264-8-0
dc.identifier.uri	http://repository.utm.md/handle/5014/11860
dc.description.abstract	In the present work we study the peculiarities of the critical current of MgB2 extracted from current-voltage (I-V) characteristics. The (I-V) characteristics of two parallel connected MgB2 microbriges (of 3 µm width and a diameter of the quantization loop about 3 µm) have been measured at different temperatures in the constant current regime. This circuit was made by a laser scribing (nitrogen laser with 337 nm wavelength) from a textured a-axis oriented MgB2 film grown on MgO (100) substrates with a critical temperature Tc=37,7 K.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	critical current	en_US
dc.subject	microbriges	en_US
dc.subject	films	en_US
dc.subject	currents	en_US
dc.title	Critical current of MgB2 microbriges	en_US
dc.type	Article	en_US