The Ionization Energy Determination of Deep Level Defects in Inhomogeneous Doped Semiconductor Barrier Structures

dc.contributor.author	GUDZEV, V.
dc.contributor.author	ZUBKOV, M. V.
dc.contributor.author	LITVINOV, V. G.
dc.contributor.author	MASLOV, A. D.
dc.date.accessioned	2020-11-29T16:07:45Z
dc.date.available	2020-11-29T16:07:45Z
dc.date.issued	2015
dc.identifier.citation	GUDZEV, V., ZUBKOV, M. V., LITVINOV, V. G., MASLOV, A. D. The Ionization Energy Determination of Deep Level Defects in Inhomogeneous Doped Semiconductor Barrier Structures. In: Telecomunicaţii, Electronică şi Informatică: proc. of the 5th intern. conf., May 20-23, 2015. Chişinău, 2015, pp. 176-178. ISBN 978-9975-45-377-6.	en_US
dc.identifier.isbn	978-9975-45-377-6
dc.identifier.uri	http://repository.utm.md/handle/5014/11834
dc.description.abstract	In this paper the high accuracy method of determination of the ionization energy of uniformly distributed defects in semiconductor barrier structures with inhomogeneous doped base is developed.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	deep level transient spectroscopy	en_US
dc.subject	determination of ionization energy	en_US
dc.subject	Schottky diode	en_US
dc.title	The Ionization Energy Determination of Deep Level Defects in Inhomogeneous Doped Semiconductor Barrier Structures	en_US
dc.type	Article	en_US