In this paper we present measurement results of a micro-machined split-block waveguide mixer for 600 GHz. The mixer implements a planar GaAs Schottky diode on a quartz substrate. Two different diode designs used for this ...

This paper proposes to control the thermal alloying process of GaAs epilayers growth by transport reaction in Ga-AsCI 3 -H 2 system. The thermal alloying process is controlled by using the universal two-channel programmable ...

The results of a convolver on tunable acoustic-electronic cryotron elaboration are presented. The performances and parameters of a convolver depend on the frequency surface acoustic waves (SAW), amount and configurations ...

The paper reports the results of investigation of the pore growth during anodic etching of (111)-oriented wafers of Si-doped n-GaAs in an environmentally friendly NaCl based electrolyte, with switching the applied voltage ...

In this report we are represented the electro-physical properties of the photovoltaic cell with single relief junction fabricated on gallium arsenide substrate by HVPE method. This cell have the shunt resistance of 3.8 ...

The activation efficiency of zinc impurity co-implanted with P/sup +/ and As/sup +/ ions in InP was studied by Hall-effect measurements. Both P/sup +/ and As/sup +/ co-implantations followed by post-implantation annealing ...