Browsing by Author "YAKUBOV, A."

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  • Contact resistance and mechanical property measurements for the Ge2Sb2Te5 thin films 
    YAKUBOV, A.; SHERCHENKOV, A.; LAZARENKO, P.; BDIKIN, I.; BABICH, A.; TEREKHOV, D. (Tehnica UTM, 2019)
    Currently, Ge2Sb2Te5 (GST225) is widely investigated as material for non-volatile phase change memory. However, for the successful implementation of the multi-layered memory cell, it is necessary to understand peculiarities ...
  • Effect of indium and tin ion implantations on the properties of Ge2Sb2Te5 thin films 
    LAZARENKO, P.; SITNIKOV, A.; KOZYUKHIN, S.; SELEZNEV, D.; KOZLOV, A.; YAKUBOV, A.; SHERCHENKOV, A.; VOROBYOV, YU.; BOYTSOVA, O.; KIRILENKO, E.; KULEVOY, T. (Tehnica UTM, 2019)
    One of the most perspective electrical and optical non-volatile memory type is phase change memory (PCM) based on the chalcogenide materials, particularly on GST225 [1]. Introduction of dopants is an effective method for ...
  • Electron microscopy studies of the crystallization of Ge2Sb2Te5 thin films for phase change memory 
    SYBINA, YU.; YAKUBOV, A.; LAZARENKO, P.; VOROBYOV, YU.; BABICH, A.,; BORGARDT, N.; KOZYUKHIN, S.; SHERCHENKOV, A. (Tehnica UTM, 2019)
    The Ge2Sb2Te5 (GST225) thin films are widely used in the nonvolatile phase change memory (PCM) [1]. The crystallization process is the slowest part of a PCM operation, thus limiting the overall performance of the PCM ...

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