Browsing by Author "KANTSER, V. G."

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  • Infrared detectors for safety-control of posoffice mesages 
    BAZALEEV, M. I.; BANDURYAN, B. B.; KLEPIKOV, V. F.; LYTVYNENKO, V. V.; NOVIKOV, V. E.; KANTSER, V. G.; ZASAVITSKY, E. A.; SIDORENKO, A. S.; MANOLACHE, C. M. (Academia Militară a Forţelor Armate “Alexandru cel Bun”, 2009)
    It is proposed a simultaneous method for treatment and control of potentially dangerous objects like viruses or explosives. Those methods are based on the prophylaxis irradiation and post irradiation IR-control.
  • New narrow-gap semiconducting solid solutions 
    KANTSER, V. G.; MALKOVA, N. M.; SIDORENKO, A. S. (Elservier, 1985)
    Within the frames of the method based on the genesis of an electronic spectrum out of atomic p-states (p-model [1]) the band structure rearrangement in dependence on composition of cubic solid solutions (TIB5C62)1−x(2A4B6)x ...
  • Sign-reversal thermopower in BI2SR2CACU2OY 
    BOIKO, M. P.; KANTSER, V. G.; KONOPKO, L. A.; SIDORENKO, A. S. (Elservier, 1989)
    Sign-reversal thermopower was observed in the single-phase superconductor Bi2Sr2CaCu2Oy. We consider the model density of states, which describes the thermopower behaviour.
  • Spin-splitted states and spin hall effect induced by polarization in semiconductors structures 
    KANTSER, V. G.; ARAPAN, S.; BYRLIBA, G.; CYRLIG, S. (Technical University of Moldova, 2005)
    A new terms of SOI induced by interband interaction through the electrical polarization or atomic displacement like optical phonons are proposed and analyzed. These SOI mechanisms have the physical nature in the relativistic ...

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