Generalized bipolariton model. Propagation of a ultrashort laser pulse through a thin semiconductor film in the conditions of two-photon generation of biexcitons

BELOUSSOV, Igor

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dc.contributor.author	BELOUSSOV, Igor
dc.date.accessioned	2019-10-24T13:03:07Z
dc.date.available	2019-10-24T13:03:07Z
dc.date.issued	2013
dc.identifier.citation	BELOUSSOV, Igor. Generalized bipolariton model. Propagation of a ultrashort laser pulse through a thin semiconductor film in the conditions of two-photon generation of biexcitons. In: ICNBME-2013. International Conference on Nanotechnologies and Biomedical Engineering. German-Moldovan Workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the 2th intern. conf., April 18-20, 2013. Chişinău, 2013, pp. 138-142. ISBN 978-9975-62-343-8	en_US
dc.identifier.isbn	978-9975-62-343-8
dc.identifier.uri	http://repository.utm.md/handle/5014/5231
dc.description.abstract	A generalized bipolariton model is proposed. Bipolaritons is formed from virtual excitons of four kinds. There exists both attractive and repulsive interaction between these excitons, though only excitons of a specific type can interact with light. A substantial difference between conventional and our models is shown for the case of nonlinear transmission/reflection of ultrashort laser pulses by a thin semiconductor film under two-photon generation of biexcitons	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.subject	biexciton	en_US
dc.subject	bipolariton	en_US
dc.subject	semiconductor	en_US
dc.subject	ultrashort laser pulse	en_US
dc.title	Generalized bipolariton model. Propagation of a ultrashort laser pulse through a thin semiconductor film in the conditions of two-photon generation of biexcitons	en_US
dc.type	Article	en_US