MORARI, V.; RUSU, V. EMIL; GHIMPU, L.
(LEPL Ilia Vekua Sukhumi Institute of Physics and Technology, 2025)
Zinc tin oxide (ZnSnO) is a ternary oxide semiconductor that has gained increasing attention due to its wide band gap, typically around 3.5 to 4.0 eV, depending on the specific stoichiometry of the material, good transparency ...