Nanoindentation Measurements of Cu Films with Different Thicknesses Deposited on a Single Crystalline Si Substrate

PYRTSAC, Constantin

dc.contributor.author	PYRTSAC, Constantin
dc.date.accessioned	2021-11-04T13:18:14Z
dc.date.available	2021-11-04T13:18:14Z
dc.date.issued	2015
dc.identifier.citation	PYRTSAC, Constantin. Nanoindentation Measurements of Cu Films with Different Thicknesses Deposited on a Single Crystalline Si Substrate. In: Nanoscience Advances in CBRN Agents Detection, Information and Energy Security. NATO Science for Peace and Security Series A: Chemistry and Biology. 2015, pp. 73-83. ISBN 978-94-017-9697-2.	en_US
dc.identifier.isbn	978-94-017-9697-2
dc.identifier.uri	https://doi.org/10.1007/978-94-017-9697-2_8
dc.identifier.uri	http://repository.utm.md/handle/5014/17890
dc.description	Access full text: https://doi.org/10.1007/978-94-017-9697-2_8	en_US
dc.description.abstract	Thin films of various types are key components of modern microelectronics. By use of the dynamic nanoindentation method, Cu/Si structures with different thicknesses of the Cu film (t = 85, 470 and 1,000 nm) were investigated. It is shown that the film thickness and the wide range of maximum loads applied are some of the main factors influencing the deformation peculiarities and mechanical properties (Young’s modulus E and hardness H) of the film/substrate structures.	en_US
dc.language.iso	en	en_US
dc.publisher	Springer Nature Switzerland	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	thin films	en_US
dc.subject	films	en_US
dc.subject	substrates	en_US
dc.title	Nanoindentation Measurements of Cu Films with Different Thicknesses Deposited on a Single Crystalline Si Substrate	en_US
dc.type	Article	en_US