Nanoindentation Measurements of Cu Films with Different Thicknesses Deposited on a Single Crystalline Si Substrate

Abstract

Thin films of various types are key components of modern microelectronics. By use of the dynamic nanoindentation method, Cu/Si structures with different thicknesses of the Cu film (t = 85, 470 and 1,000 nm) were investigated. It is shown that the film thickness and the wide range of maximum loads applied are some of the main factors influencing the deformation peculiarities and mechanical properties (Young’s modulus E and hardness H) of the film/substrate structures.