Browsing by Author "KAPON, Eli"

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  • Exciton Luminescence in In0.3Ga0.7As/GaAs Quantum Well Heterostructures 
    KAPON, Eli; MEREUŢA, Alexandru; DOROGAN, Andrei; DRAGUTAN, Nicolae; VIERU, Tatiana (Technical University of Moldova, 2011)
    Radiation maxima were observed in photoluminescence spectra of GaAs/ In0.3 Ga0.7As/ GaAs in case of 632.8nm and 532nm He-Ne laser excitation conditioned by the recombination from ground (e1-hh1, e1-lh1) and excited (e2-hh2, ...
  • Interband Optical Transitions in the Region of Excitonic Resonance in In0.3Ga0.7As/GaAs Quantum Wells 
    KAPON, Eli; MEREUŢA, Alexandru; DOROGAN, Andrei; DRAGUTAN, Nicolae; VIERU, Tatiana; SYRBU, Nicolae; ZALAMAI, Victor (Technical University of Moldova, 2011)
    Reflection spectra of In0.3Ga0.7As layers with 8nm thickness with quantum wells limited by GaAs barrier layer with 100nm thickness (bottom) and 9nm (upper) had been measured at S and P polarizations in the interval of ...
  • Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection 
    CIVIŠ, Svatopluk; ZELINGER, Zdeněk; NEVRLÝ, Václav; DOROGAN, Andrei; FERUS, Martin; IAKOVLEV, Vladimir; SIRBU, Alexei; MEREUTA, Alexandru; CALIMAN, Andrei; SURUCEANU, Grigore; KAPON, Eli (Elsevier, 2014)
    1310nm Wavelength VCSELs produce single mode emission in excess of 1mW in the temperature range of 20−70°C with a very low relative intensity noise of −148dB/Hz. These devices have a broad tuning range of ~50cm−1 with ...

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