Browsing by Author "FANG, C."

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  • Electrochemical pore etching in Ge – An overview 
    FANG, C.; FÖLL, H.; CARSTENSEN, J.; LANGA, S. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2007)
    While electrochemical pore etching in semiconductors has become a thriving field for research (and applications) in the past 15 years or so, little work has been done in Ge. Besides Si, Ge is the only semiconductor with a ...
  • Formation of metal wire arrays via electrodeposition in pores of Si, Ge and III–V semiconductors 
    FANG, C.; FOCA, E.; SIRBU, L.; CARSTENSEN, J.; FÖLL, H.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2007)
    Deep straight macropores in n-type Si have been completely filled with copper (Cu). Homogeneous metal deposition inside the deep pores was achieved by means of electroplating using a solution containing only CuSO4 mixed ...

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