Formarea peliculelor de oxizi pe suprafața siliciului cu aplicarea plasmei descărcărilor electrice în impuls de acțiune indirectă

Abstract

Oxidation of semiconductor surface by means of electrical discharges in impulse in air has been realized under normal conditions. It is shown that the morphology of oxide films depends on the processing power. The quantity of oxygen absorbed by semiconductor surface depends on discharge frequency and number of discharges.