Articole din publicaţii internaţionale: Recent submissions

  • URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; MASALOV, V. M.; SAMAROV, E. N.; EMELCHENKO, G. A.; BRIONES, F. (IOP Publishing, 2004)
    The emission from ZnO layers grown on the surface of bulk opals using chemical deposition is studied under excitation by the 351.1 nm line of an Ar+ laser at different excitation power densities and temperatures. The ...
  • TIGINYANU, I. M.; MONAICO, E.; URSAKI, V. V.; TEZLEVAN, V. E.; BOYD, Robert W. (Springer Nature Switzerland, 2005)
    We report the results of a study of the growth of pores in n-CdSen-CdSe single crystals using anodic etching techniques. Upon anodization in dark, a nonuniform distribution of pores was produced. However, anodic dissolution ...
  • MARKUSHEV, V. M.; URSAKI, V. V.; RYZHKOV, M. V.; BRISKINA, C. M.; TIGINYANU, I. M.; RUSU, E. V.; ZAKHIDOV, A. A. (Springer Nature Switzerland, 2008)
    ZnO structure in the form of a core–shell wire was grown with a modified vapour transport and condensation method. The wire consists of a dense core which may play the role of a waveguide and a shell formed mainly from ...
  • SYRBU, N. N.; TIGINYANU, I. M.; NEMERENCO, L. L.; URSAKI, V. V.; TEZLEVAN, V. E.; ZALAMAI, V. V. (ELSEVIER, 2005)
    Exciton spectra are studied in CuGaXIn1−XS2 solid solutions by means of photoreflectivity and wavelength modulation spectroscopy at liquid nitrogen temperature. The exciton parameters, dielectric constants, and free carrier ...
  • BURLAKOV, I. I.; RAPTIS, Y.; URSAKI, V. V.; ANASTASSAKIS, E.; TIGINYANU, I. M. (ELSEVIER, 1997)
    CdAl2S4 single crystals with the defect chalcopyrite structure have been studied by Raman spectroscopy at hydrostatic pressures up to 150 kbar. The Raman scattering spectra were found to undergo substantial changes around ...
  • ANEDDA, A.; CASU, M. B.; SERPI, A.; BURLAKOV, I. I.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 1997)
    Photoelectronic processes in HgGaInS4 have been studied by photoconductivity, thermally stimulated conductivity and photoluminescence. An exponential distribution of traps with a slope of 23 meV/decade as well as a further ...
  • ATUCHIN, V. V.; KESLER, V. G.; URSAKI, V. V.; TEZLEVAN, V. E. (ELSEVIER, 2006)
    Transport method are investigated with X-ray photoemission spectroscopy. The valence band of HgGa2S4 is found to be formed by splitted S 3p and Hg 6s states at binding energies BE=3–7eV and the components at BE=7–11eV ...
  • URSAKI, V. V.; MANJÓN, F. J.; TIGINYANU, I. M.; TEZLEVAN, V. E. (IOP Publishing, 2002)
    MIn2S4 (M = Mn, Cd, Mg spinels were investigated by Raman scattering spectroscopy under hydrostatic pressure up to 20 GPa. These compounds were found to undergo a reversible phase transition to a Raman-inactive defect ...
  • LÓPEZ-MORENO, S.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ROMERO, A. H.; MANJÓN, F. J.; ERRANDONEA, D.; RUSU, E.; URSAKI, V. V. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2011)
    In this work we present a first-principles density functional study of the vibrational properties of ZnAl2O4 and ZnGa2O4 as function of hydrostatic pressure. Based on our previous structural characterization of these two ...
  • SYRBU, N. N.; TIGINYANU, I. M.; ZALAMAI, V. V.; URSAKI, V. V.; RUSU, E. V. (ELSEVIER, 2004)
    Photoreflectivity and photoluminescence spectra in the region of exciton resonance were measured in ZnO single crystals. A, B, and C exciton binding energies were determined from the energy position of the ground and excited ...
  • GRZECHNIK, A.; URSAKI, V. V.; SYASSEN, K.; LOA, I.; TIGINYANU, I. M.; HANFLAND, M. (ELSEVIER, 2001)
    The high-pressure behavior of semiconducting cadmium thiogallate CdGa2Se4 with the defect chalcopyrite structure (I4, Z=2) is studied by in situ angle-dispersive synchrotron X-ray powder diffraction and optical reflectivity ...
  • TIGINYANU, I. M.; URSAKI, V. V.; KARAVANSKII, V. A.; SOKOLOV, V. N.; RAPTIS, Y. S.; ANASTASSAKIS, E. (ELSEVIER, 1996)
    Porous GaP layers prepared by electrochemical anodization of (1 0 0) and (1 1 1) A-oriented n-GaP crystalline substrates in HF solution have been studied by Raman spectroscopy. A surface vibrational mode at 397 cm−1 was ...
  • URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; MASALOV, V. M.; SAMAROV, E. N.; EMELCHENKO, G. A.; BRIONES, F. (American Institute of Physics, 2004)
    We study photoluminescence (PL) of ZnO-opal structures excited by a 351.1 nm laser line. The structures were fabricated by infiltration of ZnO from an aqueous solution of zinc nitrate into opal matrices. The emission ...
  • URSAKI, V. V.; TIGINYANU, I. M.; RICCI, P. C.; ANEDDA, A.; HUBBARD, S.; PAVLIDIS, D. (American Institute of Physics, 2003)
    Persistent photoconductivity (PPC) and optical quenching (OQ) of photoconductivity (PC) were investigated in a variety of n-GaN layers characterized by different carrier concentrations, luminescence characteristics, and ...
  • URSAKI, V. V.; BURLAKOV, I. I.; TIGINYANU, I. M.; RAPTIS, Y. S.; ANASTASSAKIS, E.; ANEDDA, A. (American Physical Society, 1999)
    Tetrahedrally bonded AGa2X4(A=Cd, Zn; X=S, Se) compounds crystallizing in defect chalcopyrite and defect famatinite structures have been studied by Raman spectroscopy under hydrostatic pressure. The pressure-induced changes ...
  • ERRANDONEA, D.; KUMAR, Ravhi S.; MANJÓN, F. J.; URSAKI, V. V.; RUSU, E. V. (American Physical Society, 2009)
    Room temperature angle-dispersive x-ray diffraction measurements on spinel ZnGa2O4 up to 56 GPa show evidence of two structural phase transformations. At 31.2 GPa, ZnGa2O4 undergoes a transition from the cubic spinel ...
  • TIGINYANU, I. M.; URSAKI, V. V.; ZALAMAI, V. V.; LANGA, S.; HUBBARD, S.; PAVLIDIS, D.; FÖLL, H. (American Institute of Physics, 2003)
    GaN nanocolumns with transverse dimensions of about 50 nm were obtained by illumination-assisted anodic etching of epilayers grown by metalorganic chemical vapor deposition on sapphire substrates. The photoluminescence ...
  • PHAN, The Long; VINCENT, Roger; CHERNS, David; NGHIA, Nguyen Xuan; URSAKI, V. V. (IOP Publishing, 2008)
    We have investigated normal and resonant Raman scattering in Me-doped ZnO nanorods (Me = Mn, Co, Cu and Ni) prepared by thermal diffusion. Experimental results show that the normal Raman spectra consist of the conventional ...
  • LUPAN, O.; CHAI, G.; CHOW, L.; EMELCHENKO, G. A.; HEINRICH, H.; URSAKI, V. V.; GRUZINTSEV, A. N.; TIGINYANU, I. M.; REDKIN, A. N. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2010)
    ZnO nanowires were synthesized by the CVD procedure and have been investigated by SEM, TEM, SAED, Raman, and cw PL spectroscopy. The fabrication of an ultraviolet (UV) photoconductive detector based on single ZnO nanowire ...
  • URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; RUSU, E. V.; EMELCHENKO, G. A.; MASALOV, V. M.; SAMAROV, E. N. (American Physical Society, 2004)
    Multiphonon resonant Raman scattering (RRS) was studied in unintentionally doped bulk ZnO crystals and layers, including nanostructured and highly conductive films, excited by 351.1 and 363.8 nm laser lines in the temperature ...

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