Articole din publicaţii internaţionale: Recent submissions

  • SÁNCHEZ, B.; MÉNDEZ, B.; PIQUERAS, J.; SIRBU, L.; TIGINYANU, I. M.; URSAKI, V. V. (Springer Nature Switzerland, 2008)
    Porous GaP layers doped with erbium or europium elements have been obtained by electrochemical etching and further impregnation processes. The thermal treatments for optical activation of rare earth (RE) ions lead to partial ...
  • SYRBU, N. N.; TIGINYANU, I. M.; URSAKI, V. V.; DOROGAN, A. V. (IOP Publishing, 2008)
    The change of polarization of the resonant Raman scattering lines is studied in CuGaxAl1−xS2 crystals with x equal to 1, 0.95 and 0.9 assuming resonance conditions with 4880 and 4765 Å Ar laser lines. Linear and circular ...
  • COLIBABA, G. V.; NEDEOGLO, D. D.; URSAKI, V. V. (ELSEVIER, 2011)
    The influence of sodium impurity on photoluminescence (PL) spectra of ZnSe crystals doped in a growth process from a Se+Na melt is investigated. It is shown that the introduction of the impurity results in emergence of ...
  • RICCI, P. C.; ANEDDA, A.; CORPINO, R.; CARBONARO, C. M.; MARCEDDU, M.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 2005)
    The Silver Gallium Sulfide (AgGaS2) ternary compound is a wide bandgap semiconductor (about 2.7eV) whose photoluminescence properties are characterized by excitons and donor–acceptor pairs recombinations. We have performed ...
  • SYRBU, N. N.; DOROGAN, V.; DOROGAN, A.; VIERU, T.; URSAKI, V. V.; ZALAMAI, V. V. (ELSEVIER, 2012)
    The transparency, reflection and luminescence spectra of In0.3Ga0.7As structures with 8nm thickness and quantum wells limited by the barrier layer GaAs of a 9nm (upper layer) and 100nm (bottom layer) thickness had been ...
  • ANEDDA, A.; SERPI, A.; MOLDOVYAN, N. A.; TIGINYANU, I. M.; URSAKI, V. V. (IOP Publishing, 1993)
    Results of a complex study of photoluminescence (PL), photoconductivity (PC) and photo-voltaic (PV) spectra in AgGa2.5In2.5S8 and CuGa2.5In2.5S8 single crystals are presented. The values of indirect (Egi=2.25 eV) and direct ...
  • STAMOV, I. G.; SYRBU, N. N.; URSAKI, V. V.; PARVAN, V. I.; ZALAMAI, V. V. (ELSEVIER, 2012)
    Optical reflection spectra are measured and calculated in PbGa2S4 crystals in the region of resonances related to excitons with large oscillator strength and binding energy (Frenkel excitons). The splitting of the upper ...
  • SIRBU, L.; URSAKI, V. V.; TIGINYANU, I. M.; DOLGALEVA, Ksenia; BOYD, Robert W. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2007)
    We demonstrate the controlled preparation of Er- and Eu-doped GaP-oxide porous composites. The fabrication procedure entails the use of porous semiconductor templates and the impregnation of rare earth ions from a rare ...
  • SYRBU, Lilian; URSAKI, V. V.; TIGINYANU, I. M.; DOLGALEVA, Ksenia; BOYD, Robert W. (IOP Publishing, 2007)
    Rare-earth-containing oxide nanocomposites are prepared in a controlled fashion from porous GaAs templates. The initial porous GaAs network is replaced by a β-Ga2O3 one during annealing at temperatures from 500 to 900 °C. ...
  • SYRBU, N. N.; PARVAN, V. I.; URSAKI, V. V. (ELSEVIER, 2012)
    Exciton states with a large oscillator strength (transverse–longitudinal splitting of 50meV) and binding energy of 290meV have been observed in PbGa2S4 crystals. The ground exciton states are stable up to the room temperature. ...
  • SERGENTU, Vladimir; URSAKI, Veaceslav; SIRBU, Lilian (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2013)
    In this paper, we demonstrate that body zero frequency modes can exist at extremely low frequencies in a system of nanocylinders made of non-dissipative material. Such kind of modes is not specific to single nanocylinders, ...
  • SHIKIMAKA, O.; BURLACU, A.; GRABCO, D.; PARVAN, V.; PYRTSAC, C.; URSAKI, V. (IOP Publishing, 2016)
    The behavior of CdGa2S4 and CdGa2Se4 single crystalline semiconductors under Berkovich indentation of the (1 1 2) face in the load range of 10–700 mN has been investigated. Values of hardness and Young’s modulus have been ...
  • TIGINYANU, I. M.; TERLETSKY, A. I.; URSAKI, V. V. (ELSEVIER, 1995)
    The influence has been studied of 100-keV He+-ion implantation and subsequent thermal annealing on Raman scattering spectra of LEC-grown InP single crystals with (100)- and (111)-crystallographic orientations of the surface. ...
  • SYRBU, N. N.; TIGINYANU, I. M.; URSAKI, V. V.; TEZLEVAN, V. E.; ZALAMAI, V. V.; NEMERENCO, L. L. (ELSEVIER, 2005)
    The value of longitudinal–transverse splitting ωLT equal to 2.5–2.8meV and the translation mass M=2.5m0 were determined for the A exciton as a result of investigation of the reflectivity and luminescence spectra of CuGaSe2 ...
  • URSAKI, V. V.; TIGINYANU, I. M.; BURLACU, A.; ZALAMAI, V.; JITARI, V. F. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2006)
    ZnO–In2O3 composite was prepared by thermal annealing of ZnIn2S4 crystals. Energy dispersive X-ray analysis demonstrated that annealing results in the formation of a composite consisting of ZnO and In2O3 phases with the ...
  • SYRBU, N. N.; DOROGAN, A. V.; URSAKI, V. V.; MASNIK, A. (IOP Publishing, 2010)
    Exciton spectra of CuAl1 − XGaXSe2 solid solutions are investigated by wavelength modulated optical reflectivity at low temperatures (10 K). The energy position of n = 1 and 2 lines of the Γ4(A), Γ5(B) and Γ5(C) exciton ...
  • SYRBU, N. N.; DOROGAN, A. V.; MASNIK, A.; URSAKI, V. V. (IOP Publishing, 2011)
    Excitonic reflection spectra of CuAlSe2 crystals were studied at 10 K. The spectral dependences of refractive indices no and ne were calculated. The isotropic wavelength (the point of intersection of no and ne) in the ...
  • GUC, M.; URSAKI, V. V.; BODNAR, I. V.; LOZHKIN, D. V.; ARUSHANOV, E.; IZQUIERDO-ROCA, V.; PÉREZ RODRÍGUEZ, A. (ELSEVIER, 2012)
    Spinel-type MnxFe1−xIn2S4 solid solutions grown by the planar melt crystallization method (the horizontal version of the Bridgman method) are investigated by means of energy dispersive X-ray analysis and Raman scattering ...
  • STAMOV, I. G.; SYRBU, N. N.; URSAKI, V. V.; ZALAMAI, V. V. (ELSEVIER, 1999)
    The anisotropy of transmission spectra was investigated in TlGaS2 crystals. An intensive transmission line was found in samples placed between two crossed polarizers. Ground and excited states of excitons were detected in ...
  • GEORGOBIANI, A. N.; AMINOV, U. A.; DRAVIN, V. A.; LEPNEV, L. S.; MULLABAEV, I. D.; URSAKI, V. V.; ILJUKHINA, Z. P. (ELSEVIER, 1999)
    The investigation of traps and recombination centres in structures based on ZnSe single crystals by means of the deep level transient spectroscopy, photoluminescence and electroluminescence methods are presented. The ...

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