Investigation of hole transport in vitreous As2S3

ANDRIESH, A. M.; IOVU, M. S.; KOLOMEYKO, E. P.; TSIULYANU, D. I.; SHUTOV, S. D.

dc.contributor.author	ANDRIESH, A. M.
dc.contributor.author	IOVU, M. S.
dc.contributor.author	KOLOMEYKO, E. P.
dc.contributor.author	TSIULYANU, D. I.
dc.contributor.author	SHUTOV, S. D.
dc.date.accessioned	2021-01-26T09:50:28Z
dc.date.available	2021-01-26T09:50:28Z
dc.date.issued	1980
dc.identifier.citation	ANDRIESH, A. M., IOVU, M. S. KOLOMEYKO, E. P. et al. Investigation of hole transport in vitreous As2S3. In: Journal of Non-Crystalline Solids. 1980, V. 35-36, P. 2, pp. 981-986. ISSN 0022-3093.	en_US
dc.identifier.uri	https://doi.org/10.1016/0022-3093(80)90328-2
dc.identifier.uri	http://repository.utm.md/handle/5014/12568
dc.description	Access full text - https://doi.org/10.1016/0022-3093(80)90328-2	en_US
dc.description.abstract	The time-of-flight measurements of the hole drift in As2S 3 films have shown that below 80°C the typical dispersive transport occurs. Very low drift mobility values (~10-10cm2/Vs at 45oc) correspond to an activation energy of 0.6 to 0.8 eV at low injection levels. At high-level injection obtained with the forward biased p-Si-As2S 3 heterojunction the drift mobility is much greater and has the value of 10 -5 cm2/ Vs at room temperature.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	holes	en_US
dc.subject	films	en_US
dc.subject	dispersive transport	en_US
dc.subject	injections	en_US
dc.subject	heterojunctions	en_US
dc.title	Investigation of hole transport in vitreous As2S3	en_US
dc.type	Article	en_US