Impact of light quantum in Rapid Photothermal Diffusion of Zn IN GaAs

Abstract

The experimental results of the Rapid Photothermal Diffusion (RPD) of Zn in GaAs and p-n junction formation, model and role of quantum factor in this process are presented in this paper. The p-n junctions with depth of 0.2-1.2μm have been obtained by RPD at 600-950°C for 6-60s diffusion time for solar cells and microelectronic application. The diffusion coefficients and activation energies of the RP-enhanced diffusion at low (N0 <;4×1019 cm -3 ) and high (N0 >1×1020 cm-3 ) concentrations of Zn in GaAs were analysed. The activation energy of RP-diffusion is lower than that of the conventional furnace diffusion and diffusion coefficient is higher by 1-2 orders of magnitude. The proposed model and calculated wavelength dependence of RP-diffusion coefficient, D(λ), are in accordance with experimental results.