Low noise amplification reliability issues

BĂJENESCU, Titu-Marius I.

dc.contributor.author	BĂJENESCU, Titu-Marius I.
dc.date.accessioned	2025-04-24T10:42:55Z
dc.date.available	2025-04-24T10:42:55Z
dc.date.issued	2024
dc.identifier.citation	BĂJENESCU, Titu-Marius I. Low noise amplification reliability issues. EEA - Electrotehnica, Electronica, Automatica. 2024, vol. 72, nr. 3, pp. 65-70. ISSN 1582-5175.	en_US
dc.identifier.issn	1582-5175
dc.identifier.uri	https://doi.org/10.46904/eea.24.72.3.1108007
dc.identifier.uri	https://repository.utm.md/handle/5014/31000
dc.description	Access full text: https://doi.org/10.46904/eea.24.72.3.1108007	en_US
dc.description.abstract	The recent boom in wireless consumer applications has emphasized the requirement for low-cost, highly integrated RF parts. pHEMTs have become the technology of choice for current system requirements. A key requirement for all systems is high reliability components that do not fail or degrade in performance during the life cycle of the product. A confident use of these technologies relies on our capacity to better understand their fault mechanisms, and our ability to deduce related fault models.	en_US
dc.language.iso	en	en_US
dc.publisher	Editura ELECTRA	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	skin effect	en_US
dc.subject	substrate losses	en_US
dc.subject	interconnect losses	en_US
dc.subject	reliability	en_US
dc.subject	failure	en_US
dc.subject	failure mechanisms	en_US
dc.title	Low noise amplification reliability issues	en_US
dc.type	Article	en_US