GaN-based 2D and 3D Architectures for Electronic Applications

CIOBANU, V.

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dc.contributor.author	CIOBANU, V.
dc.date.accessioned	2020-05-31T09:39:05Z
dc.date.available	2020-05-31T09:39:05Z
dc.date.issued	2019
dc.identifier.citation	CIOBANU, V. GaN-based 2D and 3D Architectures for Electronic Applications. In: ICNMBE-2019: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 4rd intern. conf., Sept. 18-21, 2019: Program and Abstract Book. Chişinău, 2019, p. 92. ISBN 978-9975-72-392-3.	en_US
dc.identifier.isbn	978-9975-72-392-3
dc.identifier.uri	http://repository.utm.md/handle/5014/8499
dc.identifier.uri	https://doi.org/10.1007/978-3-030-31866-6_41
dc.description	Access full text - https://doi.org/10.1007/978-3-030-31866-6_41	en_US
dc.description.abstract	In this paper we demonstrate the fabrication of electronic devices based on GaN nanostructures. For fabrication of 2D and 3D GaN nanostructures, Surface Charge Lithography (SCL) and Hydride Vapor Phase Epitaxy (HVPE) techniques were used. A memristor device based on GaN ultrathin membranes with the thickness of 15 nm obtained by SCL was elaborated. For GaN microtetrapods growth, the HVPE method was used, where ZnO microtetrapods were used as sacrificial template.	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	microtetrapods	en_US
dc.subject	ultrathin membranes	en_US
dc.subject	pressure sensors	en_US
dc.subject	memristors	en_US
dc.subject	artificial synapses	en_US
dc.title	GaN-based 2D and 3D Architectures for Electronic Applications	en_US
dc.type	Article	en_US