Numerical Estimation of the Radiation Hardness of Bipolar Integrated Circuits in Various Irradiation Conditions of Space Environment

BAKERENKOV, A. S.; PERSHENKOV, V. S.; RODIN, A. S.; FELITSYN, V. A.; MIROSHNICHENKO, A. G.

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Numerical Estimation of the Radiation Hardness of Bipolar Integrated Circuits in Various Irradiation Conditions of Space Environment

BAKERENKOV, A. S.; PERSHENKOV, V. S.; RODIN, A. S.; FELITSYN, V. A.; MIROSHNICHENKO, A. G.

URI: https://doi.org/10.1007/978-981-287-736-9_123
http://repository.utm.md/handle/5014/8298

Date: 2015

Abstract:

The conversion model of low dose rate effect in bipolar devices was used for numerical simulation of total dose effects in bipolar devices for various radiation conditions of space environment. The numerical simulation was performed for cyclic temperature irradiation, which is typical for space applications, and for solar flare impact.