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Excitonic Crystal in Nanotechnology

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dc.contributor.author PYSHKIN, S.
dc.date.accessioned 2020-05-14T12:21:30Z
dc.date.available 2020-05-14T12:21:30Z
dc.date.issued 2015
dc.identifier.citation PYSHKIN, S. Excitonic Crystal in Nanotechnology. In: ICNMBE: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 3rd intern. conf., Sept. 23-26 : Program & Abstract Book , 2015. Chişinău, 2015, p. 73. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/8196
dc.description Abstract en_US
dc.description.abstract This paper demonstrates the results of development of growth technology for perfect and free of contamination gallium phosphide (GaP) crystals and investigation of influence of crystallization conditions on quality and properties of the crystals. The long-term ordered and therefore close to ideal crystals repeat behavior of the best nanoparticles with pronounced quantum confinement effect. These perfect crystals are useful for application in top-quality optoelectronic devices as well as they are a new object for development of fundamentals of solid state physics. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject gallium phosphide crystals en_US
dc.subject crystals en_US
dc.subject nanoparticles en_US
dc.subject optoelectronic devices en_US
dc.title Excitonic Crystal in Nanotechnology en_US
dc.type Article en_US


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