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Structural, Optical and Electrical Properties of ZnO:Al Thin Films Synthesized by Sol-gel Method

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dc.contributor.author ROGACHEV, A.
dc.contributor.author SEMCHENKO, A.
dc.contributor.author SIDSKY, V.
dc.contributor.author GAISHUN, V.
dc.contributor.author KOVALENKO, D.
dc.contributor.author GREMENOK, V.
dc.contributor.author ZARETSKAYA, H.
dc.contributor.author SUDNIK, L.
dc.date.accessioned 2020-05-13T10:44:08Z
dc.date.available 2020-05-13T10:44:08Z
dc.date.issued 2015
dc.identifier.citation ROGACHEV, A., SEMCHENKO, A., SIDSKY, V. et al. Structural, Optical and Electrical Properties of ZnO:Al Thin Films Synthesized by Sol-gel Method. In: ICNMBE: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 3rd intern. conf., Sept. 23-26 : Program & Abstract Book , 2015. Chişinău, 2015, p. 59. en_US
dc.identifier.uri https://doi.org/10.1007/978-981-287-736-9_26
dc.identifier.uri http://repository.utm.md/handle/5014/8171
dc.description Access full text - https://doi.org/10.1007/978-981-287-736-9_26 en_US
dc.description.abstract The possibility of synthesis of active layers for solar cells by sol-gel method has been shown. The structural features of the surface (AFM), crystallization behavior (XRD) during the heating and properties of synthesized films are discussed. Achieved parameters suggest the possibility of using synthesized ZnO layers in solar cells. The perturbation imposed by Al atom incorporation leads to the atomic relaxation, which is computed and discussed in detail. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject sol-gel method en_US
dc.subject semiconductors en_US
dc.subject surface structures en_US
dc.subject crystallization en_US
dc.subject solar cells en_US
dc.title Structural, Optical and Electrical Properties of ZnO:Al Thin Films Synthesized by Sol-gel Method en_US
dc.type Article en_US


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