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The Impact of Porosification Upon Luminescence of HVPE Grown GaN and the Influence of the Porous Layer Upon the Quality of the Overgrown GaN Film

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dc.contributor.author BRANISTE, T.
dc.contributor.author POPA, V.
dc.contributor.author MARTIN, D.
dc.contributor.author CARLIN, J.-F.
dc.contributor.author URSAKI, V.
dc.contributor.author GRANDJEAN, N.
dc.contributor.author TIGINYANU, I.
dc.date.accessioned 2020-05-13T07:31:50Z
dc.date.available 2020-05-13T07:31:50Z
dc.date.issued 2015
dc.identifier.citation BRANISTE, T., POPA, V., MARTIN, D. et al. The Impact of Porosification Upon Luminescence of HVPE Grown GaN and the Influence of the Porous Layer Upon the Quality of the Overgrown GaN Film. In: ICNMBE: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 3rd intern. conf., Sept. 23-26 : Program & Abstract Book , 2015. Chişinău, 2015, p. 53. en_US
dc.identifier.uri https://doi.org/10.1007/978-981-287-736-9_19
dc.identifier.uri http://repository.utm.md/handle/5014/8158
dc.description Access full text - https://doi.org/10.1007/978-981-287-736-9_19 en_US
dc.description.abstract In this paper, we show that the quality of the porous layers produced by photoelectrochemical (PEC) etching of HVPE GaN in oxalic acid is better than that of the initial material, and the quality of GaN films overgrown on porous layers can be improved by adjusting the conditions of PEC etching during the preparation of porous layers. The better quality of the porous layers produced in HVPE material is indicated by the photoluminescence (PL) analysis which shows a higher intensity of the luminescence related to the recombination of free excitons as well as the intensity of the blue luminescence in the porous layers. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject hotoelectrochemical etching en_US
dc.subject porous layers en_US
dc.subject luminescence en_US
dc.title The Impact of Porosification Upon Luminescence of HVPE Grown GaN and the Influence of the Porous Layer Upon the Quality of the Overgrown GaN Film en_US
dc.type Article en_US


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