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Study of the Gallium Arsenide Layers Growing Process on the Own Oxide Surface by HVPE Method

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dc.contributor.author BARANOV, Simion
dc.contributor.author BURLACU, Alexandu
dc.contributor.author COJUHARI, Irina
dc.contributor.author FIODOROV, Ion
dc.contributor.author MORARU, Dumitru
dc.date.accessioned 2020-05-08T10:26:49Z
dc.date.available 2020-05-08T10:26:49Z
dc.date.issued 2015
dc.identifier.citation BARANOV, Simion, BURLACU, Alexandu, COJUHARI, Irina et al. Study of the Gallium Arsenide Layers Growing Process on the Own Oxide Surface by HVPE Method. In: SIELMEN: International conference on electromechanical and power systems: proc. of the 10th intern. conf., Oct. 6-9, 2015. Craiova, 2015, pp. 451-454. ISBN 978-606-567-284-0. en_US
dc.identifier.isbn 978-606-567-284-0
dc.identifier.uri http://repository.utm.md/handle/5014/8139
dc.description.abstract At the moment the global capacity of the solar energy installed in the electrical (grid) network exceed 100 GW while in 2000 it was 1,5 GW. But the efficiency of photovoltaic module remains at the silicon electro physical properties level, which makes the direct method of sun energy conversion competitive compared to traditional methods which are dangerous for the environment. The utilization of A3B5 semiconductor compounds manufacture increases over 40% of module photovoltaic efficiency, but it is not commercially competitive for terrestrial applications. Automation hydride vapor phase eptaxy (HVPE) technology of growing gallium arsenide (GaAs) epitaxial layers on own oxide substrate in Ga-AsCl3 –H2 gas system permits the exclusion of massive GaAs substrate and consequently the decrease of production costs of efficient photovoltaic cells. The investigated results of this technology are presented in the report and they are confirmed by experiments with obtained structures. It was used the AFM, RAMAN spectroscopy of investigation, electrical and optical measurements. en_US
dc.language.iso en en_US
dc.publisher Editura ALMA en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject gallium arsenide layers en_US
dc.subject vapor phase epitaxy en_US
dc.subject oxide substrates en_US
dc.subject Raman spectroscopy en_US
dc.title Study of the Gallium Arsenide Layers Growing Process on the Own Oxide Surface by HVPE Method en_US
dc.type Article en_US


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  • 2015
    6-9 Oct. 2015

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Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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