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Особенности характеристик гетероперходных структур на кристаллах 2-5 с оксидами Индия и Олова

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dc.contributor.author ПАНАСЕНКО, Вячеслав
dc.contributor.author ТКАЧЕНКО, Дмитрий
dc.contributor.author СТАМОВ, Иван
dc.contributor.author СЫРБУ, Николай
dc.date.accessioned 2020-05-04T12:02:05Z
dc.date.available 2020-05-04T12:02:05Z
dc.date.issued 2018
dc.identifier.citation ПАНАСЕНКО, Вячеслав, ТКАЧЕНКО, Дмитрий, СТАМОВ, Иван et al. Особенности характеристик гетероперходных структур на кристаллах 2-5 с оксидами Индия и Олова. In: Telecomunicaţii, Electronică şi Informatică: proc. of the 6th intern. conf., May 24-27, 2018. Chişinău, 2018, pp. 143-144. ISBN 978-9975-45-540-4. en_US
dc.identifier.isbn 978-9975-45-540-4
dc.identifier.uri http://repository.utm.md/handle/5014/8069
dc.description.abstract The heterojunction of photosensitive structures based on birefractive crystals with indium-tin oxides are obtained. The electric and photoelectric properties are investigated. The photocurrent spectra and electrical characteristics are formed by the parameters of semiconductors and the features of the energy diagrams of heterostructures. en_US
dc.language.iso ru en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject бирефрактивные кристаллы en_US
dc.subject кристаллы en_US
dc.subject гетеропереходы en_US
dc.title Особенности характеристик гетероперходных структур на кристаллах 2-5 с оксидами Индия и Олова en_US
dc.type Article en_US


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