Исследование влияния кислорода на параметры ближнего порядка структур Ge2Sb2Te5

ВИХРОВ, Сергей; ВОРОБЬЕВ, Юрий; МИТРОФАНОВ, Кирилл

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dc.contributor.author	ВИХРОВ, Сергей
dc.contributor.author	ВОРОБЬЕВ, Юрий
dc.contributor.author	МИТРОФАНОВ, Кирилл
dc.date.accessioned	2019-12-05T10:57:15Z
dc.date.available	2019-12-05T10:57:15Z
dc.date.issued	2012
dc.identifier.citation	ВИХРОВ, Сергей, ВОРОБЬЕВ, Юрий, МИТРОФАНОВ, Кирилл. Исследование влияния кислорода на параметры ближнего порядка структур Ge2Sb2Te5. In: Telecommunications, Electronics and Informatics- ICTEI 2012: proc. of the 5th intern. conf., Technical University of Moldova, May 11-13, 2012. Chișinău, 2012, Vol. 1, pp. 177-181. ISBN 978-9975-45-082-9.	en_US
dc.identifier.isbn	978-9975-45-082-9
dc.identifier.uri	http://repository.utm.md/handle/5014/7288
dc.description.abstract	The principle of the transition between crystalline and amorphous phases of Ge2Sb2Te5 underlies the functioning of common use electronic devices such as CDs and DVDs. The most important feature of Ge2Sb2Te5 chalcogenide alloy determined phase switching parameters is local structure. In the following paper the Ge2Sb2Te5 local structure investigation based on the Xray Absorption Near Edge Structure and Extended X-Ray Absorption Fine Structure measurements was performed.	en_US
dc.language.iso	ru	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	chalcogenides	en_US
dc.subject	фазовая память	en_US
dc.subject	халькогениды	en_US
dc.title	Исследование влияния кислорода на параметры ближнего порядка структур Ge2Sb2Te5	en_US
dc.type	Article	en_US