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Temperature influence on In0,3Ga0,7As / GaAs nanostructures of VCSEL lasers with quantum wells

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dc.contributor.author DOROGAN, A.
dc.contributor.author DOROGAN, V.
dc.contributor.author MEREUTA, A.
dc.contributor.author SYRBU, A.
dc.contributor.author SYRBU, N.
dc.contributor.author VIERU, T.
dc.contributor.author URSAKI, V.
dc.contributor.author ZALAMAI, V.
dc.date.accessioned 2019-12-04T10:35:42Z
dc.date.available 2019-12-04T10:35:42Z
dc.date.issued 2012
dc.identifier.citation DOROGAN, A., DOROGAN, V., MEREUTA, A. et al. Temperature influence on In0,3Ga0,7As / GaAs nanostructures of VCSEL lasers with quantum wells. In: Telecommunications, Electronics and Informatics- ICTEI 2012: proc. of the 5th intern. conf., Technical University of Moldova, May 11-13, 2012. Chișinău, 2012, Vol. 1, pp. 75-81. ISBN 978-9975-45-082-9. en_US
dc.identifier.isbn 978-9975-45-082-9
dc.identifier.uri http://repository.utm.md/handle/5014/7237
dc.description.abstract Transitions hh,lh1-e1(1s), hh1,lh1-e2(1s), hh2,lh2 -e2(1s), hh3,lh3,-e3(1s) and the particularities conditioned by quantum dots (QD) produced on the boundaries of nanolayers and buffer layer had been revealed in reflection and transparency spectra of quantum wells (QW) of In0,3Ga0,7As/GaAs. The reflection and transparency contour lines had been calculated, as for the single oscillatory as for double oscillatory model. The oscillator’s force and the dumping factor for QW and QD transitions had been calculated. The radiative lifetime of exciton in QW and QD is the same for the studied structure τо = (2Г0 )-1 ≈2-10-12 , с = 5ps. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject quantum wells en_US
dc.subject quantum dots en_US
dc.subject vertical cavity surface-emitting lasers en_US
dc.subject VCSELs en_US
dc.subject lasers en_US
dc.subject heterostructures en_US
dc.title Temperature influence on In0,3Ga0,7As / GaAs nanostructures of VCSEL lasers with quantum wells en_US
dc.type Article en_US


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