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Band Gap Size Dependence of Topological Insulator Bi2Te3 Nanotube

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dc.contributor.author BEJENARI, Igor
dc.contributor.author KANTSER, Valeriu
dc.date.accessioned 2019-11-06T15:02:54Z
dc.date.available 2019-11-06T15:02:54Z
dc.date.issued 2011
dc.identifier.citation BEJENARI, Igor, KANTSER, Valeriu. Band Gap Size Dependence of Topological Insulator Bi2Te3 Nanotube. In: Microelectronics and Computer Science: proc. of the 7th intern. Conf., September 22-24, 2011. Chişinău, 2011, vol. 1, pp. 129-132. ISBN 978-9975-45-174-1. en_US
dc.identifier.isbn 978-9975-45-174-1
dc.identifier.uri http://repository.utm.md/handle/5014/6272
dc.description.abstract We study the electronic structure of a cylindrical nanotube made of a topological insulator Bi2Te3. The calculation was made in the framework of the kp theory near the Γ point of the surface Brilloiun zone. A band gap size dependence of the topological insulator nanotube was studied. A comparative analysis of the topological insulator direct band gap of Bi2Te3 and Bi2Se3 nanowires as a function of radius was done. Due to high surface-to volume ratio, a variation of nanotube geometrical sizes provides decreasing of the topological insulator band gap in 60 times compared to the corresponding bulk value. The size dependence of topological insulator nanotube band gap is mach stronger than that for the topological insulator nanowires. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject nanowires en_US
dc.subject nanotubes en_US
dc.subject surface states en_US
dc.subject topological insulators en_US
dc.title Band Gap Size Dependence of Topological Insulator Bi2Te3 Nanotube en_US
dc.type Article en_US


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