Abstract:
Recently, Ge et. al. [1] showed that in atomic sheets of transition metal (from the group
VI B) dichalcogenides (TMD) (Fig. 1) (MoS2, MoSe2, WS2 and WSe2) nonvolatile resistance
switching occurs. In order to understand this behaviour of mono-layer TMD, at these very intense electric
fields (E = 1.43*109 V/m), we advance the hypothesis (and structural models) that the nonvolatile
resistance switching might occur by two successive structural transformations due to local
coordination changes of the transition metal and the chalcogen atoms.