Structure of nanosized Ge2Sb2Te5 films with silver impurity

Abstract

The paper presents the results of studying the structure of nanosized films Ge2Sb2Te5 with silver impurity (Ge2Sb2Te5<Ag>). The films were obtained by the method of ion-plasma highfrequency magnetron sputtering. Upon receipt of the films, a combined target was used, consisting of the composition Ge2Sb2Te5 of AciAlloys (USA) and Ag. The composition of the films was controlled by energy-dispersion analysis (EDXA) on the SEM Quanta 3D 200i. The film thickness was determined by scanning on SEM cleavage of c-Si / Ge2Sb2Te5 <Ag> film and ranged from ~ 50 to ~ 100 nm. The concentration of silver impurities in the Ge2Sb2Te5 <Ag> films reached 12.3 at.%.