dc.contributor.author | BORDIAN, O.T. | |
dc.contributor.author | VERLAN, V. I. | |
dc.contributor.author | CULEAC, I. P. | |
dc.contributor.author | ZUBAREV, V. E. | |
dc.contributor.author | MALAHOV, L. A. | |
dc.date.accessioned | 2019-11-04T12:15:30Z | |
dc.date.available | 2019-11-04T12:15:30Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | BORDIAN, O. T., VERLAN, V. I., CULEAC, I. P., ZUBAREV, V. E., MALAHOV, L. A. Preparation of As2S3 thin layers for applications in optoelectronics. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, pp. 52-53. | en_US |
dc.identifier.uri | http://repository.utm.md/handle/5014/6001 | |
dc.description | Abstract | en_US |
dc.description.abstract | The experimental results on the technology of As2S3 thin films and their characteristization using optical methods as a study of surface plasmon resonance (SPR), a light modulators that contains an amorphous As2S3 films as a waveguides are presented. This is due to refractive index changing when illuminated. As2S3 thin films were obtained by thermal evaporation in vacuum (5x10-6 Torr) from As2S3 powder. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Tehnica UTM | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | As2S3 thin films | en_US |
dc.subject | surface plasmon resonance (SPR) | en_US |
dc.subject | optoelectronics | en_US |
dc.title | Preparation of As2S3 thin layers for applications in optoelectronics | en_US |
dc.type | Article | en_US |
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