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Preparation of As2S3 thin layers for applications in optoelectronics

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dc.contributor.author BORDIAN, O.T.
dc.contributor.author VERLAN, V. I.
dc.contributor.author CULEAC, I. P.
dc.contributor.author ZUBAREV, V. E.
dc.contributor.author MALAHOV, L. A.
dc.date.accessioned 2019-11-04T12:15:30Z
dc.date.available 2019-11-04T12:15:30Z
dc.date.issued 2019
dc.identifier.citation BORDIAN, O. T., VERLAN, V. I., CULEAC, I. P., ZUBAREV, V. E., MALAHOV, L. A. Preparation of As2S3 thin layers for applications in optoelectronics. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, pp. 52-53. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/6001
dc.description Abstract en_US
dc.description.abstract The experimental results on the technology of As2S3 thin films and their characteristization using optical methods as a study of surface plasmon resonance (SPR), a light modulators that contains an amorphous As2S3 films as a waveguides are presented. This is due to refractive index changing when illuminated. As2S3 thin films were obtained by thermal evaporation in vacuum (5x10-6 Torr) from As2S3 powder. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject As2S3 thin films en_US
dc.subject surface plasmon resonance (SPR) en_US
dc.subject optoelectronics en_US
dc.title Preparation of As2S3 thin layers for applications in optoelectronics en_US
dc.type Article en_US


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