Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures

Abstract

The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of ears open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator.